Sr Application Engineer, EDA (10770)

Veterans Preference

Seeking a Senior EDA Applications Engineer with hands-on GaN and/or GaAs RF Power Amplifier (PA) design experience to define, deploy, and support next generation 5G NR and 6G PA and RF Front-End Module (FEM) development. This is a hybrid role: part senior PA designer, part EDA methodology owner. You will bring practical, hands-on PA design expertise to the EDA flows (ADS, HFSS, Cadence, Synopsys, and related tools) that RF, analog, mixed-signal, and digital design teams depend on - ensuring those flows are grounded in real design and correlation challenges, from initial architecture definition through high-volume manufacturing.

Responsibilities:

Hands-On PA/RF Design

• Directly support the design of high-efficiency, high-linearity GaN and/or GaAs PAs and RF FEMs for 5G NR/6G, applying hands-on expertise to validate and continuously improve EDA methodology.

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• Lead or support the integration of PA dies into multi-chip modules (MCM), optimizing methodology and flows for size, cost, and thermal performance.

EDA Applications Engineering and Methodology

• Provide day-to-day applications support for PA, RFIC, analog, mixed-signal, and digital design teams using industry-standard EDA tools (Cadence Virtuoso/Spectre, Keysight ADS, Ansys HFSS, Synopsys HSPICE/PrimeSim/VCS, Xcelium, AWR, or equivalent).

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• Develop, qualify, and deploy RF/PA design flows spanning circuit-level simulation (ADS) and 3D electromagnetic simulation (HFSS), consistency between models and measured silicon performance for GaN/GaAs technologies.

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• Evaluate, benchmark, and deploy new EDA capabilities for custom RF/analog design, AMS simulation, and digital verification, prioritized against real PA design and correlation challenges.

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• Partner with EDA vendors to resolve technical issues, influence tool roadmaps, and pilot new capabilities relevant to GaN/GaAs RF design.

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• Build reference design flows, PDK enablement, reusable automation, and documented best practices spanning RF, analog, AMS, and digital methodologies.

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• Deliver hands-on training, documentation, and mentoring to raise designer proficiency; document and present methodology and design results to internal and external stakeholders.

Required Qualifications:

• Bachelors Degree in Electrical Engineering with 5+ years of industry experience in hands-on GaN and/or GaAs RF Power Amplifier design, or an advanced degree with equivalent experience.

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• Proven track record designing PAs/FEMs using GaN and/or GaAs (HBT, HEMT, or related) technologies for cellular, 5G NR, 6G, or other high-frequency applications.

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• Understanding of RF fundamentals, including S-parameters, impedance matching, stability, and linearity.

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• Extensive hands-on experience with ADS, HFSS, and Cadence for RF circuit and EM design.

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• Solid background in RF measurement and characterization, with the ability to correlate simulated models to measured silicon performance.

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• Demonstrated ability to translate hands-on design experience into scalable methodology, flows, and best practices for a broader design organization.

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• Technical communication and presentation skills; ability to work independently in a fast-paced environment.

Preferred Qualifications

• Experience defining or deploying enterprise-wide EDA design flows and methodology across multiple design teams.

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• Knowledge of EM, package, thermal, and multi-physics simulation for RF front-end modules.

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• Direct experience collaborating with EDA vendors on tool qualification and roadmap evelopment.

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• Experience carrying a PA or FEM design through the transition to high-volume manufacturing.
• Knowledge of Synopsys HSPICE/PrimeSim/VCS or Xcelium.

Location: We are open to position being based in our Richardson TX or Apopka FL office.

This position requires access to ITAR/EAR technologies. Applicant must be a US Person (US citizen, permanent resident, asylee, or refugee) or eligible to obtain necessary export authorizations.

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